Datasheet Details
| Part number | AOT14N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 435.87 KB |
| Description | 14A N-Channel MOSFET |
| Download | AOT14N50 Download (PDF) |
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| Part number | AOT14N50 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 435.87 KB |
| Description | 14A N-Channel MOSFET |
| Download | AOT14N50 Download (PDF) |
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Product Summary The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 TO-220F Top View TO-263 D2PAK D 600V@150℃ 14A < 0.38W D G AOT14N50 DS G AOTF14N50 S GD S AOB14N50 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT14N50/AOB14N50 AOTF14N50 Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 14 14* 11 11* 56 6 540 1080 5 TC=25°C Power Dissipation B Derate above 25oC PD 278 2.2 50 0.4 Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL -55 to 150 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOT14N50/AOB14N50 65 0.5 AOTF14N50 65 -- Maximum Junction-to-Case RqJC 0.45 2.5 * Drain current limited by maximum junction temperature.
S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev 7.0: January 2021 www.aosmd.com Page 1 of 6 AOT14N50/AOB14N50/AOTF14N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C 500 600 V BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V 0.5 V/ oC
AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOT14N50 | 14A N-Channel MOSFET | Freescale |
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AOT14N50 | N-Channel MOSFET | INCHANGE |
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AOT14N50FD | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOT14N50FD | N-Channel MOSFET |
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| AOT10B65M1 | 10A Alpha IGBT |
| AOT10B65MQ2 | 10A AlphaIGBT |
| AOT10N60 | 10A N-Channel MOSFET |
| AOT10N65 | 10A N-Channel MOSFET |
| AOT10T60 | N-Channel MOSFET |
| AOT10T60P | N-Channel MOSFET |
| AOT1100L | 100V N-CHANNEL MOSFET |