Datasheet Details
| Part number | AOT1608L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 280.82 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOT1608L Download (PDF) |
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| Part number | AOT1608L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 280.82 KB |
| Description | 60V N-Channel MOSFET |
| Download | AOT1608L Download (PDF) |
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Product Summary The AOT1608L/AOB1608L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control.
With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 60V 140A < 7.6mW Top View D TO220 Bottom View D Top View TO-263 D2PAK Bottom View D D S GD G SD S G G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 140 100 256 11 9 113 638 333 166 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 12 48 0.35 Max 15 60 0.45 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1.0: January 2024 www.aosmd.com Page 1 of 6 AOT1608L/AOB1608L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 60 V IDSS Zero Gate Voltage Drain Current VDS=60V, VGS=0V TJ=55°C 1 mA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.5 3.1 3.7
AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AOT1608L | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| AOT1606L | 60V N-Channel MOSFET |
| AOT160A60L | N-Channel Power Transistor |
| AOT16N50 | N-Channel MOSFET |
| AOT10B60D | 10A IGBT |
| AOT10B65M1 | 10A Alpha IGBT |
| AOT10B65MQ2 | 10A AlphaIGBT |
| AOT10N60 | 10A N-Channel MOSFET |
| AOT10N65 | 10A N-Channel MOSFET |
| AOT10T60 | N-Channel MOSFET |
| AOT10T60P | N-Channel MOSFET |