AOT20S60 Datasheet | Alpha & Omega Semiconductors

Description The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 80A 0.199Ω 20n C 4.9µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT20S60L & AOB20S60L & AOTF20S60L Top View TO-220 TO-220F(3k VAC; 1s) TO-263 2 D D PAK D D S G AOT20S60 AOTF20S60 S G AOB20S60 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol AOT20S60/AOB20S60 VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25o C MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT20S60/AOB20S60 65 0.5 0.47 266 2.1 20 14 AOTF20S60 600 ±30 20- 14- 80 3.4 23 188 50 0.4 100 20 -55 to 150 300 AOTF20S60 65 -2.5 AOTF20S60L Units V V 20- 14- A A m J m J 37.8 0.3 W W/ o C V/ns ° C ° C AOTF20S60L 65 -3.3 Units ° C/W ° C/W ° C/W RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC - Drain current limited by maximum junction temperature. Rev 5: Sep 2012 .aosmd. Page 1 of 7 Free Datasheet http://../ AOT20S60/AOB20S60/AOTF20S60 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current...