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Alpha & Omega Semiconductors

AOT2610L Datasheet Preview

AOT2610L Datasheet

N-Channel MOSFET

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AOT2610L/AOTF2610L
60V N-Channel MOSFET
General Description
Product Summary
The AOT2610L & AOTF2610L uses trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of RDS(ON), Ciss and
Coss. This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
60V
55A / 35A
< 10.7m
< 13.5m
D
G
AOT2610L
DS
G
AOTF2610L
S
GD
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAS
Avalanche energy L=0.1mH C
EAS
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
AOT2610L
AOTF2610L
60
±20
55
35
39
25
140
9
7
36
65
75
31
37.5
15.5
2.1
1.3
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
AOT2610L
15
60
2.0
AOTF2610L
15
60
4.8
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev.1.0: March 2013
www.aosmd.com
Page 1 of 7




Alpha & Omega Semiconductors

AOT2610L Datasheet Preview

AOT2610L Datasheet

N-Channel MOSFET

No Preview Available !

AOT2610L/AOTF2610L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
V
IDSS
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
1
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGSID=250µA
1.4 2
2.5 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
8.7 10.7
m
15.7 18.9
VGS=4.5V, ID=20A
10.7 13.5 m
gFS
Forward Transconductance
VDS=5V, ID=20A
85
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.72 1
V
IS
Maximum Body-Diode Continuous Current
35
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2007
pF
177
pF
12.5
pF
0.6 1.2 1.8
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
20.6 30 nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=30V, ID=20A
8.5 13 nC
5
nC
Qgd
Gate Drain Charge
2.2
nC
tD(on)
Turn-On DelayTime
8.5
ns
tr
Turn-On Rise Time
VGS=10V, VDS=30V, RL=1.5,
3.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
27
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
19
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
69.5
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: March 2013
www.aosmd.com
Page 2 of 7


Part Number AOT2610L
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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AOT2610L Datasheet PDF






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