Datasheet4U Logo Datasheet4U.com

AOT424 - N-Channel MOSFET

General Description

The AOT424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

This device is ideally suited for use as a low side switch in CPU core power conversion.

Standard Product AOT424 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) DataShee G DataSheet4U. com S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A M.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOT424 N-Channel MOSFET INCHANGE
AOT42S60 N-Channel MOSFET INCHANGE
AOT404 N-Channel MOSFET INCHANGE
AOT410L TO-220 N-Channel MOSFET INCHANGE
AOT412 N-Channel MOSFET INCHANGE

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOT426 N-Channel MOSFET
AOT428 N-Channel MOSFET
AOT42S60 Power Transistor
AOT42S60L 600V Power Transistor
AOT400 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com AOT424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOT424 is Pb-free (meets ROHS & Sony 259 specifications). AOT424L is a Green Product ordering option. AOT424 and AOT424L are electrically identical. TO-220 D Features VDS (V) = 30V ID = 110A (VGS = 10V) RDS(ON) < 4mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) DataShee G DataSheet4U.