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AOT426 - N-Channel MOSFET

General Description

The AOT426 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOT426 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 85A RDS(ON) < 6mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) DataShee DataSheet4U. com G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 30 ±20 85 62.5 200 30 45 75 37.5 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=1.

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Other Datasheets by Alpha & Omega Semiconductors

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AOT400 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOT426 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT426 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT426 is Pb-free (meets ROHS & Sony 259 specifications). AOT426L is a Green Product ordering option. AOT426 and AOT426L are electrically identical. TO-220 D Features VDS (V) = 30V ID = 85A RDS(ON) < 6mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS = 4.5V) DataShee DataSheet4U.