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AOT428 - N-Channel MOSFET

General Description

The AOT428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOT428 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 75V ID = 80A (VGS = 10V) RDS(ON) < 11 mΩ (VGS = 10V) Top View Drain Connected to Tab e DataShe G S DataSheet4U. com G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 75 ±30 80 57 300 60 180 115 58 -55 to 175 Units V V A A mJ W °C TC=25°C TC=100°C ID IDM IAR EAR PD TJ, TSTG TC=25°C Repetitive avalanche energy L=0.1mH Power D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOT428 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT428 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT428 is Pb-free (meets ROHS & Sony 259 specifications). AOT428L is a Green Product ordering option. AOT428 and AOT428L are electrically identical. TO-220 D Features VDS (V) = 75V ID = 80A (VGS = 10V) RDS(ON) < 11 mΩ (VGS = 10V) Top View Drain Connected to Tab e DataShe G S DataSheet4U.