AOT460 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AOT460
Manufacturer	Alpha & Omega Semiconductors
File Size	182.19 KB
Description	N-Channel MOSFET
Datasheet	AOT460_AlphaOmegaSemiconductors.pdf

The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) 100% UIS Tested! TO220 Top View Bottom View D D S GD G SD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ,.

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Published: May 12, 2009 |