Datasheet4U Logo Datasheet4U.com

AOT460 - N-Channel MOSFET

General Description

The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in UPS, high current switching applications.

AOT460and AOT460L are electrically identical.

Key Features

  • VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) 100% UIS Tested! TO220 Top View Bottom View D D S GD G SD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD Junction and Storage Temperature Range TJ,.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOT460 N-Channel MOSFET INCHANGE
AOT462L N-Channel MOSFET INCHANGE
AOT466L N-Channel MOSFET INCHANGE
AOT404 N-Channel MOSFET INCHANGE
AOT410L TO-220 N-Channel MOSFET INCHANGE

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOT462 N-Channel MOSFET
AOT462L 60V N-Channel MOSFET
AOT466L 60V N-Channel MOSFET
AOT400 N-Channel MOSFET
AOT402 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOT460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical. -RoHS Compliant -Halogen Free Features VDS (V) = 60V ID = 85 A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) 100% UIS Tested! TO220 Top View Bottom View D D S GD G SD G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.