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Alpha & Omega Semiconductors

AOT502 Datasheet Preview

AOT502 Datasheet

N-Channel MOSFET

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AOT502
Clamped N-Channel MOSFET
General Description
Product Summary
AOT502 uses an optimally designed temperature
compensated gate-drain zener clamp. Under overvoltage
conditions, the clamp activates and turns on the MOSFET,
safely dissipating the energy in the MOSFET.
The built in resistor guarantees proper clamp operation
under all circuit conditions, and the MOSFET never goes
into avalanche breakdown. Advanced trench technology
provides excellent low Rdson, gate charge and body diode
characteristics, making this device ideal for motor and
inductive load control applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Clamped
60A
< 11.5m
TO220
Top View
Bottom View
D
S
D
G
G
SD
10
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS,IAR
EAS,EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Maximum
Clamped
Clamped
60
41
137
9
7
28.5
41
79
39
1.9
1.2
-55 to 175
Typ
Max
13
15.6
54
65
1.6
1.9
Rev1: May 2009
www.aosmd.com
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Page 1 of 7




Alpha & Omega Semiconductors

AOT502 Datasheet Preview

AOT502 Datasheet

N-Channel MOSFET

No Preview Available !

AOT502
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS(z) Drain-Source Breakdown Voltage
ID=10mA, VGS=0V
33
V
BVCLAMP Drain-Source Clamping Voltage
ID=1A, VGS=0V
36
44
V
IDSS(z)
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
20 µA
BVGSS
IGSS
Gate-Source Voltage
Gate-Body leakage current
VDS=0V, ID=250µA
VDS=0V, VGS=±10V
20
V
10 µA
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.6 2.1 2.7 V
ID(ON)
On state drain current
VGS=10V, VDS=5V
137
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=30A
TJ=125°C
9.3 11.5
m
15.4 18.5
gFS
Forward Transconductance
VDS=5V, ID=30A
55
S
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.73 1
V
IS
Maximum Body-Diode Continuous Current
75
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
960 1205 1450 pF
185 266 345 pF
65 109 155 pF
10
20 30.0
SWITCHING PARAMETERS
Qg
Total Gate Charge
18.5 23.4 28 nC
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=30A
2.7 3.4
4
nC
Qgd
Gate Drain Charge
4
7
10 nC
tD(on)
Turn-On DelayTime
13.5
ns
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=0.5,
17.5
ns
tD(off)
Turn-Off DelayTime
RGEN=3
63
ns
tf
Turn-Off Fall Time
27
ns
trr
Body Diode Reverse Recovery Time IF=30A, dI/dt=750A/µs
14 17.5 21 ns
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=750A/µs
53.5 67
80 nC
A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: May 2009
www.aosmd.com
Page 2 of 7


Part Number AOT502
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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AOT502 Datasheet PDF






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