Datasheet Details
| Part number | AOTF10N90 |
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| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 292.77 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOTF10N90 Datasheet
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| Part number | AOTF10N90 |
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| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 292.77 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AOTF10N90 Datasheet
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Product Summary The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOTF10N90L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-220F 1000V@150℃ 10A < 0.98Ω D AOTF10N90 S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt VGS ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Symbol Maximum Junction-to-Ambient A,D RθJA Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature.
G AOTF10N90 900 ±30 10* 7* 38 3.7 205 410 5 50 0.4 -55 to 150 300 AOTF10N90 65 2.5 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W Rev0: Oct 2012 www.aosmd.com Page 1 of 5 AOTF10N90 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C 900 1000 V BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V 0.9 V/ oC IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dio
AOTF10N90 900V, 10A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF10N90 | N-Channel MOSFET | INCHANGE |
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