AOTF13N50 Datasheet | Alpha & Omega Semiconductors

Description Product Summary The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 600V@150℃ 13A < 0.51W AOT13N50 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT13N50 Drain-Source Voltage Gate-Source Voltage ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt 13- 8.5- 908 5 TC=25°C Power Dissipation B Derate above 25o...