900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Alpha & Omega Semiconductors

AOTF3N100 Datasheet Preview

AOTF3N100 Datasheet

N-Channel MOSFET

No Preview Available !

AOT3N100/AOTF3N100
1000V,2.8A N-Channel MOSFET
General Description
Product Summary
The AOT3N100 & AOTF3N100 are fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications.By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability these
parts can be adopted quickly into new and existing offline
power supply designs.
For Halogen Free add "L" suffix to part number:
AOT3N100 & AOTF3N100L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
TO-220
Top View
TO-220F
1100@150
2.8A
< 6
D
S
G
AOT3N100
D
G
AOTF3N100
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
AOT3N100
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current
TC=25°C
TC=100°C
ID
2.8
1.8
Pulsed Drain Current C
IDM
Avalanche Current C
IAR
Repetitive avalanche energy C
EAR
Single pulsed avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
132
1.1
AOTF3N100
1000
±30
2.8*
1.8*
10
2.2
72
145
5
38
0.3
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
-55 to 150
300
Parameter
Symbol
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT3N100
65
0.5
0.95
AOTF3N100
65
--
3.3
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev. 1.0 January 2013
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOTF3N100 Datasheet Preview

AOTF3N100 Datasheet

N-Channel MOSFET

No Preview Available !

AOT3N100/AOTF3N100
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
IDSS
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
ISM
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=1000V, VGS=0V
VDS=800V, TJ=125°C
VDS=0V, VGS=±30V
VDS=5V, ID=250µA
VGS=10V, ID=1.5A
VDS=40V, ID=1.5A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=800V, ID=3A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=500V, ID=3A,
RG=25
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=3A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
Min Typ Max Units
1000
3.3
1100
1.07
4
4.8
4
0.76
1
10
±100
4.5
6
1
2.8
10
V
V/ oC
µA
nΑ
V
S
V
A
A
550 690 830 pF
30 44 60 pF
2
5
8
pF
1.6 3.5 5.2
10 15 20 nC
3.8
nC
4.7
nC
22
ns
25
ns
40
ns
24
ns
300 400 500 ns
2.7 3.7 4.7 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.2A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 January 2013
www.aosmd.com
Page 2 of 6


Part Number AOTF3N100
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
PDF Download

AOTF3N100 Datasheet PDF






Similar Datasheet

1 AOTF3N100 N-Channel MOSFET
INCHANGE
2 AOTF3N100 N-Channel MOSFET
Alpha & Omega Semiconductors





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy