Datasheet Details
| Part number | AOTF3N100 |
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| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.10 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AOTF3N100 Datasheet
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Download the AOTF3N100 datasheet PDF. This datasheet also includes the AOT3N100 variant, as both parts are published together in a single manufacturer document.
| Part number | AOTF3N100 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.10 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AOTF3N100 Datasheet
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Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
For Halogen Free add "L" suffix to part number: AOT3N100 & AOTF3N100L VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 1100@150℃ 2.8A < 6W D S G AOT3N100 D G AOTF3N100 S GD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT3N100 AOTF3N100 Drain-Source Voltage VDS 1000 Gate-Source Voltage VGS ±30 Continuous Drain Current TC=25°C TC=100°C ID 2.8 2.8* 1.8 1.8* Pulsed Drain Current C IDM 10 Avalanche Current C IAR 2.2 Repetitive avalanche energy C EAR 72 Single pulsed avalanche energy G EAS 145 Peak diode recovery dv/dt dv/dt 5 TC=25°C Power Dissipation B Derate above 25oC PD 132 1.1 38 0.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient A,D Maximum Case-to-sink A RqJA RqCS Maximum Junction-to-Case RqJC * Drain current limited by maximum junction temperature.
AOT3N100 65 0.5 0.95 AOTF3N100 65 -3.3 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev.1.1: May 2024 www.aosmd.com Page 1 of 6 AOT3N100/AOTF3N100 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C ID=250μA, VGS=0V 1000 1100 1.07 V V/ oC ID
AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOTF3N100 | N-Channel MOSFET | INCHANGE |
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