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Alpha & Omega Semiconductors

AOTF3N80 Datasheet Preview

AOTF3N80 Datasheet

N-Channel MOSFET

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AOTF3N80
800V, 2.8A N-Channel MOSFET
General Description
Product Summary
The AOTF3N80 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC-
DC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability this part can
be adopted quickly into new and existing offline power
supply designs.
For Halogen Free add "L" suffix to part number:
AOTF3N80L
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-220F
900V@150
2.8A
< 4.8
D
AOTF3N80
S
GD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
G
AOTF3N80
800
±30
2.8*
1.8*
9
2.2
72
145
5
35
0.3
-55 to 150
300
AOTF3N80
65
3.6
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
Rev.1.0 May 2013
www.aosmd.com
Page 1 of 5




Alpha & Omega Semiconductors

AOTF3N80 Datasheet Preview

AOTF3N80 Datasheet

N-Channel MOSFET

No Preview Available !

AOTF3N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
ID=250µA, VGS=0V
800
900
0.78
V
V/ oC
IDSS
Zero Gate Voltage Drain Current
VDS=800V, VGS=0V
VDS=640V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=1.5A
VDS=40V, ID=1.5A
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=640V, ID=3A
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=3A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=3A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
1
10
µA
±100 nΑ
3.3 4.2 4.5
V
3.8 4.8
2.5
S
0.77 1
V
2.8
A
9
A
510
pF
39
pF
3.7
pF
2.9
10
nC
2.6
nC
2.9
nC
21
ns
25
ns
34
ns
19
ns
344
ns
2.2
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.2A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 May 2013
www.aosmd.com
Page 2 of 5


Part Number AOTF3N80
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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