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AOTF409 - P-Channel MOSFET

Key Features

  • The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load.

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AOTF409 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electrically identical. VDS (V) =-60V ID = -24A RDS(ON) < 40mΩ RDS(ON) < 54mΩ (VGS = -10V) (VGS = -10V) (VGS = -4.