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Alpha & Omega Semiconductors

AOTF409 Datasheet Preview

AOTF409 Datasheet

P-Channel MOSFET

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AOTF409
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOTF409/L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low gate
resistance. With the excellent thermal resistance of the
TO220FL package, this device is well suited for high
current load applications.AOTF409 and AOTF409L are
electrically identical.
VDS (V) =-60V
ID = -24A
RDS(ON) < 40m
RDS(ON) < 54m
(VGS = -10V)
(VGS = -10V)
(VGS = -4.5V)
- RoHS Compliant
- AOTF409L Halogen Free
100% UIS Tested!
TO-220FL
D
G
DS
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
Current G
TC=25°C
TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain
Current
TA=25°C
TA=70°C
IDSM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.1mH C
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-60
±20
-24
-17
-60
-5.4
-4.3
-37
68
43
21
2.16
1.38
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
t 10s
Steady-State
RθJA
10
48.5
12
58
Maximum Junction-to-Case
Steady-State
RθJC
2.9
3.5
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com




Alpha & Omega Semiconductors

AOTF409 Datasheet Preview

AOTF409 Datasheet

P-Channel MOSFET

No Preview Available !

AOTF409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
-60
V
IDSS
Zero Gate Voltage Drain Current
VDS=-60V, VGS=0V
TJ=55°C
-1
µA
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
±100 nA
VGS(th) Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.2 -2.1 -2.4 V
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
A
RDS(ON) Static Drain-Source On-Resistance
VGS=-10V, ID=-20A
VGS=-4.5V, ID=-20A
TJ=125°C
33
40
m
52.4 63
43
54 m
gFS
Forward Transconductance
VDS=-5V, ID=-20A
33
S
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
-0.73 -1
V
IS
Maximum Body-Diode Continuous Current
-30
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=-30V, f=1MHz
1969 2461 2953 pF
125 178 231 pF
Crss
Reverse Transfer Capacitance
72 120 168 pF
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
1
2
4.0
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
34
43
52
nC
Qg(4.5V) Total Gate Charge (4.5V)
Qgs
Gate Source Charge
VGS=-10V, VDS=-30V, ID=-20A
16 19.7 24 nC
8 10.2 12 nC
Qgd
Gate Drain Charge
5
8.9 12.5 nC
tD(on)
Turn-On DelayTime
12
ns
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-30V, RL=1.5,
14.5
ns
RGEN=3
38
ns
tf
Turn-Off Fall Time
15
ns
trr
Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs
18 25.68 33
ns
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
117 167.12 217 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : Aug-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com



Part Number AOTF409
Description P-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 3 Pages
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