Electrical Characteristics (TJ=25°C unless otherwise noted)
Min Typ Max Units
BVDSS Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
VGS(th) Gate Threshold Voltage
-1.2 -2.1 -2.4 V
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
VGS=0V, VDS=-30V, f=1MHz
1969 2461 2953 pF
125 178 231 pF
Reverse Transfer Capacitance
72 120 168 pF
VGS=0V, VDS=0V, f=1MHz
Qg(10V) Total Gate Charge (10V)
Qg(4.5V) Total Gate Charge (4.5V)
Gate Source Charge
VGS=-10V, VDS=-30V, ID=-20A
16 19.7 24 nC
8 10.2 12 nC
Gate Drain Charge
8.9 12.5 nC
Turn-On Rise Time
VGS=-10V, VDS=-30V, RL=1.5Ω,
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs
18 25.68 33
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs
117 167.12 217 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Rev 0 : Aug-08
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FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.