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Alpha & Omega Semiconductors

AOTF4N60L Datasheet Preview

AOTF4N60L Datasheet

N-Channel MOSFET

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AOT4N60/AOTF4N60/AOTF4N60L
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOT4N60 & AOTF4N60 & AOTF4N60L have been
fabricated using an advanced high voltage MOSFET process
that is designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with guaranteed
avalanche capability these parts can be adopted quickly into
new and existing offline power supply designs.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
700V@150
4A
< 2.2
TO-220
Top View
TO-220F
D
D
S
D
G
AOT4N60
DS
G
AOTF4N60(L)
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT4N60
4
2.7
104
0.83
AOT4N60
65
0.5
1.2
G
S
AOTF4N60
600
±30
4*
2.7*
16
2.5
94
188
50
5
35
0.28
-55 to 150
300
AOTF4N60
65
--
3.6
AOTF4N60L
4*
2.7*
25
0.20
AOTF4N60L
65
--
5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Rev.11.0: September 2017
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOTF4N60L Datasheet Preview

AOTF4N60L Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=2A
gFS
Forward Transconductance
VDS=40V, ID=2A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=480V, ID=4A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=4A,
RG=25
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Charge IF=4A,dI/dt=100A/µs,VDS=100V
Min Typ Max Units
600
700
V
0.69
V/ oC
1
µA
10
±100 nΑ
3
4
4.5
V
1.9 2.2
7.4
S
0.77 1
V
4
A
16
A
400 511 615 pF
40
51
65
pF
3.5 4.4 5.3 pF
3.3 4.2 6.3
15
18
nC
3
3.6
nC
7.6 9.1 nC
20.2 30
ns
28.7 42
ns
36
51
ns
27
40
ns
212 254 ns
1.6 1.9
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.5A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.11.0: September 2017
www.aosmd.com
Page 2 of 6



Part Number AOTF4N60L
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
Total Page 3 Pages
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