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Alpha & Omega Semiconductors

AOTF5N50FD Datasheet Preview

AOTF5N50FD Datasheet

N-Channel MOSFET

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AOTF5N50FD
500V, 5A N-Channel MOSFET with Fast Recovery Diode
General Description
Product Summary
The AOTF5N50FD has been fabricated using an
advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in
popular AC-DC applications. By providing low RDS(on), Ciss
and Crss along with guaranteed avalanche capability this
part can be adopted quickly into new and existing offline
power supply designs.
For Halogen Free add "L" suffix to part number:
AOTF5N50FDL
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
100% UIS Tested
100% Rg Tested
Top View
TO-220F
600V@150
5A
<1.8
D
AOTF5N50FD
S
D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy G
Peak diode recovery dv/dt
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
G
AOTF5N50FD
500
±30
5*
3*
13
2.3
79
158
5
35
0.3
-55 to 150
300
AOTF5N50FD
65
3.6
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
Rev.1.0: July 2013
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOTF5N50FD Datasheet Preview

AOTF5N50FD Datasheet

N-Channel MOSFET

No Preview Available !

AOTF5N50FD
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
ID=10mA, VGS=0V, TJ=25°C
ID=10mA, VGS=0V, TJ=150°C
ID=10mA, VGS=0V
500
600
0.56
V
V/ oC
IDSS
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
gFS
VSD
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=10V, ID=2.5A
VDS=40V, ID=2.5A
IS=5A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=400V, ID=5A
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=5A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=5A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V
10
µA
100
±100 nΑ
2.5 3.5 4.2
V
1.5 1.8
4
S
0.93 1.6
V
5
A
13
A
350 440 530 pF
35
50
65
pF
2.5 4.5 6.5 pF
1.7 3.4 5.2
8
11
15
nC
2.7
nC
3.8
nC
18
ns
33
ns
31
ns
26
ns
87 145 ns
0.2 0.4 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.3A, VDD=150V, RG=25, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2013
www.aosmd.com
Page 2 of 6


Part Number AOTF5N50FD
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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