Datasheet Details
| Part number | AOWF10N65 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 490.20 KB |
| Description | 10A N-Channel MOSFET |
| Download | AOWF10N65 Download (PDF) |
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Overview: AOW10N65/AOWF10N65 650V,10A N-Channel MOSFET General.
Download the AOWF10N65 datasheet PDF. This datasheet also includes the AOW10N65 variant, as both parts are published together in a single manufacturer document.
| Part number | AOWF10N65 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 490.20 KB |
| Description | 10A N-Channel MOSFET |
| Download | AOWF10N65 Download (PDF) |
|
|
|
Product Summary The AOW10N65/AOWF10N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-262 Top View Bottom View TO-262F Top View Bottom View 750V@150℃ 10A < 1W D S GD AOW10N65 G SD DS G AOWF10N65 G D S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOW10N65 AOWF10N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 10 10* 6.2 6.2* 36 3.4 173 347 5 TC=25°C Power Dissipation B Derate above 25oC PD 250 28 2 0.22 Junction and Storage Temperature Range Maximum lead temperature for soldering TJ, TSTG -55 to 150 purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RqJA RqCS AOW10N65 65 0.5 AOWF10N65 65 -- Maximum Junction-to-Case RqJC 0.5 4.5 * Drain current limited by maximum junction temperature.
S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev1.1: March 2024 www.aosmd.com Page 1 of 6 AOW10N65 /AOWF10N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250μA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V VDS=520V, TJ=1
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