Datasheet Details
| Part number | AOWF412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 419.08 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
 AOWF412 Datasheet
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| Part number | AOWF412 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 419.08 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet |
AOWF412 Datasheet
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The AOWF412 are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100% UIS Tested 100% Rg Tested 100V 30A < 15.8mW < 19.4mW TO-262F D Top View Bottom View G S GD G SD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS,IAR EAS,EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±25 30 20 170 7.8 6 47 110 33 16 2.1 1.3 -55 to 175 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 12 48 Maximum Junction-to-Case Steady-State RqJC 3.7 Max 15 60 4.5 S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev1.0: February 2024 www.aosmd.com Page 1 of 7 AOWF412 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C 10 mA 50 IGSS Gate-Body leakage current VDS=0V, VGS= ±25V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ,ID=250mA 2.6 3.2 3.8 V ID(ON) On state drain current VGS=10V, VDS=5V 170 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A VGS=7V, ID=20A TJ=125°C 13.2 15.8 mW 25 30 15.5 19.4 mW gFS Forward Transconductance VDS=5V
AOWF412 100V N-Channel MOSFET SDMOS TM General.
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