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Alpha & Omega Semiconductors

AOY2N60 Datasheet Preview

AOY2N60 Datasheet

N-Channel MOSFET

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AOY2N60
600V,2A N-Channel MOSFET
General Description
• Advanced High Voltage MOSFET technology
• Low RDS(ON)
• Low Ciss and Crss
• High Current Capability
• RoHS and Halogen Free Compliant
Product Summary
VDS @ Tj,max
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
700V
2A
< 4.7
Applications
• General Lighting for LED and CCFL
• AC/DC Power supplies for Industrial, Consumer, and
Telecom
100% UIS Tested
100% Rg Tested
TO251B
D
Top View
Bottom View
D
S
D
G
AOY2N60
Orderable Part Number
AOY2N60
G
D
S
Package Type
TO-251B
Form
Tube
G
S
Minimum Order Quantity
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
CurrentB
TC=100°C
Pulsed Drain Current C
Avalanche Current C,I
Repetitive avalanche energy C,I
Single pulsed avalanche energy H
Peak diode recovery dv/dt
VDS
VGS
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TJ, TSTG
TL
Maximum
600
±30
2
1.4
6
4.6
10.6
97
5
57
0.45
-50 to 150
300
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A,G
Maximum Case-to-sink A
Maximum Junction-to-CaseD,F
Symbol
RθJA
RθCS
RθJC
Typical
40
-
1.8
Maximum
50
0.5
2.2
Units
°C/W
°C/W
°C/W
Rev.1.0: May 2014
www.aosmd.com
Page 1 of 6




Alpha & Omega Semiconductors

AOY2N60 Datasheet Preview

AOY2N60 Datasheet

N-Channel MOSFET

No Preview Available !

Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/∆TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=600V, VGS=0V
VDS=480V, TJ=125°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
VDS=40V, ID=1A
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
VGS=0V, VDS=25V, f=1MHz
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=480V, ID=2A
Qgd
Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=300V, ID=2A,
RG=25
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time IF=2A,dI/dt=100A/µs,VDS=100V
Qrr
Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V
600
700
V
0.7
V/ oC
1
µA
10
±100 nΑ
3.4
4
4.5
V
3.9 4.7
2.8
S
0.79 1
V
2
A
6
A
295
pF
30
pF
2.3
pF
3.2
6.5 11 nC
1.5
nC
1.8
nC
16
ns
11
ns
28
ns
14
ns
268
ns
1.6
µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=1.8A, VDD=150V, RG=10, Starting TJ=25°C.
I. L=1.0mH, VDD=150V, RG=25Ω, Starting TJ=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2014
www.aosmd.com
Page 2 of 6


Part Number AOY2N60
Description N-Channel MOSFET
Maker Alpha & Omega Semiconductors
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