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D3N50 - AOD3N50

General Description

The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

Key Features

  • VDS (V) = 600V @ 150°C ID = 2.8A RDS(ON) < 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C C Maximium 500 ±30 2.8 1.8 9.0 2.0 60 120 5 57 0.45 -50 to 150 300 Units V V A A mJ mJ V/ns W W/ C °C °C o TC=25°C TC=100°C ID IDM IAR EAR H Repetitive aval.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD3N50 3A, 500V N-Channel MOSFET General Description The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. Features VDS (V) = 600V @ 150°C ID = 2.8A RDS(ON) < 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View Bottom View D D G S S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C C Maximium 500 ±30 2.8 1.8 9.0 2.