D3N50
Description
The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Key Features
- VDS (V) = 600V @ 150°C ID = 2.8A RDS(ON) < 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested!
