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Alpha & Omega Semiconductors

D3N50 Datasheet Preview

D3N50 Datasheet

AOD3N50

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AOD3N50
3A, 500V N-Channel MOSFET
General Description
The AOD3N50 has been fabricated using an
advanced high voltage MOSFET process that is
designed to deliver high levels of performance and
robustness in popular AC-DC applications.
By providing low RDS(on), Ciss and Crss along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power
supply designs.
TO-252
D-PAK
Top View
Bottom View
D
Features
VDS (V) = 600V @ 150°C
ID = 2.8A
RDS(ON) < 3(VGS = 10V)
100% UIS Tested!
100% R g Tested!
D
GS
SG
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximium
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS ±30
Continuous Drain
TC=25°C
Current B
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM
IAR
EAR
EAS
2.8
1.8
9.0
2.0
60
120
Peak diode recovery dv/dt
dv/dt
5
TC=25°C
Power Dissipation B Derate above 25oC
PD
57
0.45
Junction and Storage Temperature Range TJ, TSTG
-50 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
TL
300
Thermal Characteristics
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambient A,G
RθJA
45
55
Maximum Case-to-Sink A
RθCS
-
0.5
Maximum Junction-to-Case D,F
RθJC
1.8
2.2
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.Datasheet4U.com




Alpha & Omega Semiconductors

D3N50 Datasheet Preview

D3N50 Datasheet

AOD3N50

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AOD3N50
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=125°C
BVDSS
/TJ
Breakdown Voltage Temperature
Coefficient
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
VDS=400V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
gFS Forward Transconductance
VDS=40V, ID=1.5A
VSD Diode Forward Voltage
IS=1A, VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
500
600
V
V
0.54
V/ oC
1
10
µA
±100 nA
3.5 4.1 4.7
V
2.3 3
2.8 S
0.78 1
V
3A
9A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
221 276 331
25 31.4 38
2.1 2.6 3.0
1.9 3.9 5.9
pF
pF
pF
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=400V, ID=3A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=250V, ID=3A,
tD(off)
Turn-Off DelayTime
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
6.7
1.7
2.7
11
19
20.5
15
134
0.89
8.0
2.0
3.2
13.2
23.0
24.6
18.0
161
1.1
nC
nC
nC
ns
ns
ns
ns
ns
µC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting
the upper dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2A, VDD=50V, RG=10, Starting TJ=25°C
Rev1: Dec. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKE-50 to 175
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
Free Datasheet http://www.Datasheet4U.com


Part Number D3N50
Description AOD3N50
Maker Alpha & Omega Semiconductors
Total Page 6 Pages
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