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TF7N65 Datasheet AOTF7N65

Manufacturer: Alpha & Omega Semiconductors

General Description

Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.

By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.

VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested TO-220 Top View TO-220F 750V@150℃ 7A < 1.56Ω D G D S G D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT7N65 AOTF7N65 Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt 7 7* 4.4 4.4* 24 3.4 173 347 5 TC=25°C

Overview

AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General.