AO4710
Description
SRFET TM The AO4710 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Product Summary
VDS (V) = 30V ID =12.7A (VGS = 10V) RDS(ON) < 11.8mΩ (VGS = 10V) RDS(ON) < 14.2mΩ (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
SOIC-8 Bottom View
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current C
Repetitive avalanche energy L=0.3m H C
IDSM IDM IAR EAR
Power Dissipation
TA=25°C TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 12.7 10 60 22 73 3.1 2.0
-55 to 150
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
Units V V A A A m J W °C
Thermal Characteristics
Para...
