AOD609G
AOD609G is Complementary Enhancement Mode Field Effect Transistor manufactured by Alpha & Omega Semiconductors.
Description
The AOD609G uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The plementary MOSFETs may be used in H-bridge, Inverters and other applications.
-Ro HS pliant -Halogen Free-
Features n-channel
VDS (V) = 40V, ID = 12A (VGS=10V) RDS(ON)< 30m W (VGS=10V) RDS(ON)< 40m W (VGS=4.5V) p-channel
VDS (V) = -40V, ID = -12A (VGS=-10V) RDS(ON)< 45m W (VGS= -10V) RDS(ON)< 66m W (VGS= -4.5V) 100% UIS Tested!
100% Rg Tested!
Top View
TO-252-4L D-PAK
D1/D2
Bottom View
Top View Drain Connected to Tab
D1/D2
G2 S2 G1 S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TC=25°C
Current B,G
TC=100°C
Pulsed Drain Current B
Avalanche Current C
Repetitive avalanche energy L=0.1m H C
Power Dissipation TC=25°C TC=100°C
Power Dissipation TA=25°C TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
G1 S1 n-channel
G2 S2 p-channel
Max n-channel 40 ±20 12 12 30 14 9.8 27 14 2...
