AOK42S60 Datasheet | Alpha & Omega Semiconductors

Description The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 700V 166A 0.099Ω 40n C 9.2µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK42S60L Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25o C MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case TC=25° C TC=100° C VGS ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA RθCS RθJC AOK42S60 600 ±30 39 25 166 11 234 1345 417 3.3 100 20 -55 to 150 300 AOK42S60 40 0.5 0.3 Units V V A A m J m J W W/ o C V/ns ° C ° C Units ° C/W ° C/W ° C/W Rev0: Jan 2012 .aosmd. Page 1 of 6 Free Datasheet http://../ AOTF42S60 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Pulsed Current ID=250µA, VGS=0V, TJ=25° C C ID=250µA, VGS=0V, TJ=150° VDS=600V, VGS=0V VDS=480V, TJ=150° C VDS=0V, VGS=±30V VDS=5V,ID=250µA VGS=10V, ID=21A, TJ=25° C C VGS=10V, ID=21A, TJ=150° C IS=21A,VGS=0V, TJ=25° 600 650 2.5...