AOK60N30L Datasheet | Alpha & Omega Semiconductors

Description Product Summary The AOK60N30L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-247 350@150℃ 60A < 0.056Ω Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25o C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RθJA RθCS RθJC AOK60N30L 300 ±30 60 40 200 9.5 1353 2707 5 658 5.3 -55 to 150 AOK60N30L 40 0.5 0.19 Units V...