AON2880
Description
The AON2880 bines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device contains two MOSFETs arranged in a mon-drain configuration to facilitate bi-directional battery charge control with reverse protection.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS = 2.5V) 20V 7A < 21.5mΩ < 30.0mΩ
ESD protected!
DFN2- 2 Top View Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D D D D
Pin1
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead C TA=25° TA=70° C VGS ID IDM PD TJ, TSTG
Maximum 20 ±12 7 6 30 2.0 1.3 -55 to 150
Units V V A
W ° C
Symbol t ≤ 10s Steady-State Steady-State
RθJA...
