AON6708 Overview
SRFETTM The AON6708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a low side FET in SMPS, load switchng and general purpose applications. The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case.