Datasheet Details
| Part number | AON6934A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 633.15 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AON6934A_AlphaOmegaSemiconductors.pdf |
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Overview: AON6934A 30V Dual Asymmetric N-Channel AlphaMOS General.
| Part number | AON6934A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 633.15 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet | AON6934A_AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free pliant Applications • DC/DC Converters in puting, Servers, and POL • Isolated DC/DC Converters in Tele and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 28A <5.2mΩ <9.5mΩ Q2 30V 36A <2.9mΩ <4.4mΩ Top View DFN5X6 Bottom View PIN1 PIN1 Top View BoBtotottmomViVeiwew Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain CurrentG TC=25°C TC=100°C ID 28 36 22 28 Pulsed Drain Current C IDM 112 144 Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche Energy L=0.05mH C IDSM IAS EAS 22 17 32* 26* 30 24 46* 53* VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=100°C PD 31 12 33 13 TA=25°C Power Dissipation A TA=70°C PDSM 3.6 2.3 4.3 2.7 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D t ≤ 10s Steady-State Symbol RθJA Maximum Junction-to-Case Steady-State RθJC *Q1 L=0.1mH, IAS=20A, EAS=20mJ, Starting TJ=25°C.
*Q2 L=0.1mH, IAS=33A, EAS=54mJ, Starting TJ=25°C.
Typ Q1 29 56 3.3 Typ Q2 24 50 3 Max Q1 35 67 4 Max Q2 29 60 3.8 Units °C/W °C/W °C/W Rev 2.0 : April 2014 .aosmd.
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