AON7280
Description
Product Summary
The AON7280 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, tele, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V)
100% UIS Tested 100% Rg Tested
80V 50A < 8.5mΩ < 12mΩ
DFN 3.3x3.3 EP
Top View
Bottom View
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1m H C
IDSM
IAS EAS
TC=25°C Power Dissipation B TC=100°C
TA=25°C Power Dissipation A TA=70°C
PDSM
Junction and...
