FIGB25N120TDG Datasheet, American First Semiconductor

ƽ NPT Trench Technology, Positive temperature coefficient ƽ Low saturation voltage: VCE(sat), typ = 2.0V @ I C = 25A and TC = 25 C ƽ Extremely enhanced avalanche capabili.

Using First proprietary Trench design and advanced NPT technologv, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and sweasy parallel operation. Features ƽ NPT Trench Technology, Positive temperatu.