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American First Semiconductor

MBRS250G Datasheet Preview

MBRS250G Datasheet

(MBRS220G - MBRS2100G) 2.0A Surface Mount Schottky Barrier Rectifiers

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Chip Schottky Barrier Rectifier
MBRS220G THRU MBRS2100G
2.0A Surface Mount Schottky Barrier
Rectifiers -20V-200V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
Suffix "-H" indicates Halogen-free parts, ex. MBRS220G-H.
Mechanical data
Epoxy: UL94-V0 rated frame retardant
Case: Molded plastic, DO-214AC / SMA
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: lndicated by cathode band
Mounting Position: Any
Weight: Approximated 0.05 gram
Package outline
SMA
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.032(0.8) Typ.
0.068(1.7)
0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T A=25oC unless otherwise noted)
PARAMETER
Forward rectified current
See Fig.1
CONDITIONS
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
Junction to case
f=1MHz and applied 4V DC reverse voltage
Symbol MIN.
IO
IFSM
TYP.
MAX. UNIT
2.0 A
50 A
IR
RθJA
RθJC
CJ
TSTG
0.5
mA
10
55 OC/W
30 OC/W
160 pF
-65 +175 OC
SYMBOLS
MBRS220G
MBRS230G
MBRS240G
MBRS250G
MBRS260G
MBRS280G
MBRS2100G
V
*
RRM
1
(V)
20
30
40
50
60
80
100
V
*
RMS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.50
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=2.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2




American First Semiconductor

MBRS250G Datasheet Preview

MBRS250G Datasheet

(MBRS220G - MBRS2100G) 2.0A Surface Mount Schottky Barrier Rectifiers

No Preview Available !

MBRS220G THRU MBRS2100G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
2.4
2.0
1.6
1.2
0.8
0.4
0
0 20 40 60 80 100 120 140 160 180 200
LEAD TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
TJ=25 C
8.3ms Single Half
20 Sine Wave
JEDEC method
10
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
700
600
500
400
300
200
100
0
.01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0
0.1
TJ=25 C
Pulse Width 300us
1% Duty Cycle
.01
.1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
1.0
TJ=75 C
.1
TJ=25 C
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
www.First-semi.com
Page 2/2


Part Number MBRS250G
Description (MBRS220G - MBRS2100G) 2.0A Surface Mount Schottky Barrier Rectifiers
Maker American First Semiconductor
Total Page 2 Pages
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