BLA6G1011-200R transistor equivalent, power ldmos transistor.
* Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:
* Output power = 200 W
* Power gain =.
at frequencies from 1030 MHz to 1090 MHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C.
Test sig.
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C.
Test signal
f
(MHz)
VDS PL
Gp
D tr
(V) (W) (dB) (%) (ns)
Typical RF perform.
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