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BLA8G1011LS-300G - Power LDMOS transistor

Download the BLA8G1011LS-300G datasheet PDF. This datasheet also covers the BLA8G1011L-300 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a class-AB production test circuit.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Enhanced ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (1030 MHz to 1090 MHz).
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLA8G1011L-300-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLA8G1011LS-300G
Manufacturer Ampleon
File Size 400.62 KB
Description Power LDMOS transistor
Datasheet download datasheet BLA8G1011LS-300G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLA8G1011L(S)-300; BLA8G1011L(S)-300G Power LDMOS transistor Rev. 4 — 4 August 2016 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Test signal f VDS PL Gp D (MHz) (V) (W) (dB) (%) tr (ns) pulsed RF 1060 32 300 16.5 56 14 tf (ns) 5 1.