BLA9G1011L-300G transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated dual sided ESD protection enables excellent off-state isolation
* Enhanced ruggedness
* High efficiency
* Excellent .
at frequencies from 1030 MHz to 1090 MHz.
Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50.
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.
Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 100 mA; in a class-AB demo test circuit.
Test signal
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