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BLA9G1011L-300G Datasheet - Ampleon

Power LDMOS transistor

BLA9G1011L-300G Features

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* Enhanced ruggedness

* High efficiency

* Excellent thermal stability

* Designed for broadband operation (1030 MHz to 1090 MHz)

* Internally matched for ease of use

* Com

BLA9G1011L-300G General Description

300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical information Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 100 mA; in a class-AB demo test circuit. Test signal f VDS PL Gp D tr tf (MHz) (V) (W) (dB) (.

BLA9G1011L-300G Datasheet (807.73 KB)

Preview of BLA9G1011L-300G PDF

Datasheet Details

Part number:

BLA9G1011L-300G

Manufacturer:

Ampleon

File Size:

807.73 KB

Description:

Power ldmos transistor.
BLA9G1011L(S)-300; BLA9G1011L(S)-300G Power LDMOS transistor Rev. 1 25 July 2017 Product data sheet 1. Product profile 1.1 General descri.

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TAGS

BLA9G1011L-300G Power LDMOS transistor Ampleon

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