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BLC8G09XS-400AVT Datasheet - Ampleon

Power LDMOS transistor

BLC8G09XS-400AVT Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent digital pre-distortio

BLC8G09XS-400AVT General Description

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32V; IDq = 880 mA (main); VGS(amp)peak = 0.8 .

BLC8G09XS-400AVT Datasheet (627.73 KB)

Preview of BLC8G09XS-400AVT PDF

Datasheet Details

Part number:

BLC8G09XS-400AVT

Manufacturer:

Ampleon

File Size:

627.73 KB

Description:

Power ldmos transistor.

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TAGS

BLC8G09XS-400AVT Power LDMOS transistor Ampleon

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