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BLC8G09XS-400AVT - Power LDMOS transistor

General Description

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLC8G09XS-400AVT
Manufacturer Ampleon
File Size 627.73 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC8G09XS-400AVT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLC8G09XS-400AVT Power LDMOS transistor Rev. 2 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 791 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 32V; IDq = 880 mA (main); VGS(amp)peak = 0.8 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 791 to 821 32 93 17.2 46 34 [1] [1] Test signal: 1-carrier W-CDMA; 3GPP test model 1; 64 DPCH; PAR = 9.6 dB at 0.01 % probability on CCDF. 1.