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BLC8G24LS-241AV - Power LDMOS transistor

Description

240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit.

Features

  • Excellent ruggedness.
  • High-efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation (2300 MHz to 2400 MHz).
  • Asymmetric design to achieve optimum efficiency across the band.
  • Lower output capacitance for im.

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Datasheet Details

Part number BLC8G24LS-241AV
Manufacturer Ampleon
File Size 373.92 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC8G24LS-241AV Datasheet
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Full PDF Text Transcription

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BLC8G24LS-241AV Power LDMOS transistor Rev. 2 — 2 December 2016 Product data sheet 1. Product profile 1.1 General description 240 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.30 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 28 56 15 44 29 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. 1.
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