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BLC9G20LS-470AVT Datasheet - Ampleon

Power LDMOS transistor

BLC9G20LS-470AVT Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation (1805 MHz to 1990 MHz)

* Asymmetric design to achieve optimum efficiency across the band

* Lower output capacitance fo

BLC9G20LS-470AVT General Description

470 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 500 mA (main); VGS(amp)peak = 0.

BLC9G20LS-470AVT Datasheet (708.91 KB)

Preview of BLC9G20LS-470AVT PDF

Datasheet Details

Part number:

BLC9G20LS-470AVT

Manufacturer:

Ampleon

File Size:

708.91 KB

Description:

Power ldmos transistor.

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TAGS

BLC9G20LS-470AVT Power LDMOS transistor Ampleon

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