Datasheet4U Logo Datasheet4U.com

BLC9G20XS-160AV - Power LDMOS transistor

General Description

160 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo test circuit.

Key Features

  • Excellent ruggedness.
  • High-efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for broadband operation (1805 MHz to 1990 MHz).
  • Asymmetric design to achieve optimum efficiency across the band.
  • Lower output capacitance for improved.

📥 Download Datasheet

Datasheet Details

Part number BLC9G20XS-160AV
Manufacturer Ampleon
File Size 811.73 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC9G20XS-160AV Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLC9G20XS-160AV Power LDMOS transistor Rev. 3 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo test circuit. VDS = 30 V; IDq = 300 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 1805 to 1880 30 28 16.6 47 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. 1.