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BLC9G21LS-60AV - Power LDMOS transistor

General Description

60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Asymmetric design to achieve optimum efficiency across the band.
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLC9G21LS-60AV
Manufacturer Ampleon
File Size 770.75 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC9G21LS-60AV Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLC9G21LS-60AV Power LDMOS transistor Rev. 1 — 6 July 2017 Product data sheet 1. Product profile 1.1 General description 60 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 1930 to 1990 28 2.5 17.5 D (%) 30 ACPR (dBc) 39 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01% probability on CCDF per carrier. 1.