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BLC9G22LS-160VT - Power LDMOS transistor

General Description

160 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB demo application.

Key Features

  • Excellent ruggedness.
  • Excellent video-bandwidth enabling full band operation.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Designed for low memory effects providing excellent pre-distortability.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restric.

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Datasheet Details

Part number BLC9G22LS-160VT
Manufacturer Ampleon
File Size 640.10 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC9G22LS-160VT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLC9G22LS-160VT Power LDMOS transistor Rev. 2 — 24 May 2017 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB demo application. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 864 28 35 18.4 33 31 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. 1.