Datasheet4U Logo Datasheet4U.com

BLC9G27XS-380AVT - Power LDMOS transistor

General Description

380 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth.
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Datasheet Details

Part number BLC9G27XS-380AVT
Manufacturer Ampleon
File Size 794.28 KB
Description Power LDMOS transistor
Datasheet download datasheet BLC9G27XS-380AVT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLC9G27XS-380AVT Power LDMOS transistor Rev. 2 — 24 November 2017 Product data sheet 1. Product profile 1.1 General description 380 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in the Doherty demo board. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) 1-carrier W-CDMA 2620 to 2690 30 63 15.5 D (%) 43 ACPR (dBc) 33 [1] [1] Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.