BLF7G10L-250 Datasheet - Ampleon

Power LDMOS transistor

BLF7G10L-250 Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation (869 MHz to 960 MHz)

* Lower output capacitance for impro

BLF7G10L-250 General Description

250 W LDMOS power transistor for base station applications at frequencies from 869 MHz to 960 MHz. Table 1. Typical performance Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing = 5 MHz. Typical RF performance at Tcase = 25 C. Test s.

BLF7G10L-250 Datasheet (403.59 KB)

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Datasheet Details

Part number:

BLF7G10L-250

Manufacturer:

Ampleon

File Size:

403.59 KB

Description:

Power ldmos transistor.

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BLF7G10L-250 Power LDMOS transistor Ampleon

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BLF7G10L-250 Features

BLF7G10L-250 General Description

Datasheet Details

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