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BLF7G22LS-250P Datasheet - Ampleon

Power LDMOS transistor

BLF7G22LS-250P Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for low memory effects providing excellent pre-distortability

* Internally matched for ease of use

* Integrated ESD protection

* Compliant to Directive 2002/95/EC, regardin

BLF7G22LS-250P General Description

250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (.

BLF7G22LS-250P Datasheet (604.03 KB)

Preview of BLF7G22LS-250P PDF

Datasheet Details

Part number:

BLF7G22LS-250P

Manufacturer:

Ampleon

File Size:

604.03 KB

Description:

Power ldmos transistor.
BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General descriptio.

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BLF7G22LS-250P Power LDMOS transistor Ampleon

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