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BLF7G24LS-140 - Power LDMOS transistor

Download the BLF7G24LS-140 datasheet PDF. This datasheet also covers the BLF7G24L-140 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF7G24L-140-Ampleon.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BLF7G24LS-140
Manufacturer Ampleon
File Size 376.82 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G24LS-140 Datasheet

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Other Datasheets by Ampleon

Part Number Description
BLF7G24LS-100 Power LDMOS transistor
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BLF7G24L-140 Power LDMOS transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 4 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 1300 28 30 18.5 26.5 45[1] 1 carrier W-CDMA 2300 to 2400 1300 28 50 18.5 33 - 35[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.