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BLF8G09LS-400PGW Datasheet - Ampleon

Power LDMOS transistor

BLF8G09LS-400PGW Features

* Excellent ruggedness

* Device can operate with the supply current delivered through the video leads

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Designed for broadband operation

* Lower output capacitance for improved performance in Doh

BLF8G09LS-400PGW General Description

400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device. Test signal f IDq VDS PL(AV) Gp D ACPR5.

BLF8G09LS-400PGW Datasheet (437.87 KB)

Preview of BLF8G09LS-400PGW PDF

Datasheet Details

Part number:

BLF8G09LS-400PGW

Manufacturer:

Ampleon

File Size:

437.87 KB

Description:

Power ldmos transistor.
BLF8G09LS-400PW; BLF8G09LS-400PGW Power LDMOS transistor Rev. 5 1 September 2015 Product data sheet 1. Product profile 1.1 General descri.

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TAGS

BLF8G09LS-400PGW Power LDMOS transistor Ampleon

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