BLF8G19LS-170BV transistor equivalent, power ldmos transistor.
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwi.
at frequencies from 1800 MHz to 1990 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a com.
170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circu.
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