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BLF8G19LS-170BV Datasheet - Ampleon

Power LDMOS transistor

BLF8G19LS-170BV Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (100 M

BLF8G19LS-170BV General Description

170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR .

BLF8G19LS-170BV Datasheet (415.05 KB)

Preview of BLF8G19LS-170BV PDF

Datasheet Details

Part number:

BLF8G19LS-170BV

Manufacturer:

Ampleon

File Size:

415.05 KB

Description:

Power ldmos transistor.

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TAGS

BLF8G19LS-170BV Power LDMOS transistor Ampleon

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