BLL8H0514-25 transistor equivalent, power ldmos transistor.
* Easy power control
* Integrated dual side ESD protection
* High flexibility with respect to pulse formats
* Excellent ruggedness
* High efficiency <.
in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA.
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information
Typical RF performance at Tcase = 25 C; IDq = 50 mA; in a class-AB application circuit.
Test signal f
tp VDS PL Gp RLin D.
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