• Part: BLL9G1214L-600
  • Description: LDMOS L-band radar power transistor
  • Category: Transistor
  • Manufacturer: Ampleon
  • Size: 485.01 KB
Download BLL9G1214L-600 Datasheet PDF
Ampleon
BLL9G1214L-600
description 600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 m A; in a class-AB demo test circuit. Test signal f PL(3d B) Gp D (GHz) (V) (W) (d B) (%) pulsed RF 1.2 to 1.4 32 600 19 60 1.2 Features and benefits - High efficiency - Excellent ruggedness - Designed for L-band operation - Excellent thermal stability - Easy power control - Integrated dual sided ESD protection enables excellent off-state isolation - High flexibility with respect to pulse formats - Internally matched for ease of use - pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) 1.3 Applications - L-band radar applications in the...