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BLL9G1214LS-600 Datasheet - Ampleon

LDMOS L-band radar power transistor

BLL9G1214LS-600 Features

* High efficiency

* Excellent ruggedness

* Designed for L-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match

BLL9G1214LS-600 General Description

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(3dB) Gp D (GHz) (V) (W.

BLL9G1214LS-600 Datasheet (485.01 KB)

Preview of BLL9G1214LS-600 PDF

Datasheet Details

Part number:

BLL9G1214LS-600

Manufacturer:

Ampleon

File Size:

485.01 KB

Description:

Ldmos l-band radar power transistor.
BLL9G1214L-600; BLL9G1214LS-600 LDMOS L-band radar power transistor Rev. 1 27 November 2017 Product data sheet 1. Product profile 1.1 Gen.

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TAGS

BLL9G1214LS-600 LDMOS L-band radar power transistor Ampleon

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