BLL9G1214LS-600, BLL9G1214L-600 Datasheet - Ampleon

BLL9G1214LS-600 LDMOS L-band radar power transistor

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 400 mA; in a class-AB demo test circuit. Test signal f VDS PL(3dB) Gp D (GHz) (V) (W.

BLL9G1214LS-600 Features

* High efficiency

* Excellent ruggedness

* Designed for L-band operation

* Excellent thermal stability

* Easy power control

* Integrated dual sided ESD protection enables excellent off-state isolation

* High flexibility with respect to pulse formats

* Internally match

BLL9G1214LS-600, BLL9G1214L-600 Datasheet

BLL9G1214LS-600 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLL9G1214LS-600, BLL9G1214L-600. Please refer to the document for exact specifications by model.

BLL9G1214LS-600 Datasheet Preview Page 2

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Datasheet Details

Part number:

BLL9G1214LS-600, BLL9G1214L-600

Manufacturer:

Ampleon

File Size:

485.01 KB

Description:

Ldmos l-band radar power transistor.

This datasheet PDF includes multiple part numbers: BLL9G1214LS-600, BLL9G1214L-600.
Please refer to the document for exact specifications by model.

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TAGS

BLL9G1214LS-600 BLL9G1214L-600 LDMOS L-band radar power transistor Ampleon

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