Datasheet4U Logo Datasheet4U.com

BLS6G2731S-120 Datasheet - Ampleon

LDMOS S-band radar power transistor

BLS6G2731S-120 Features

* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:

* Output power = 120 W

* Power gain = 13.5 dB

* Efficiency = 48 %

* Easy power control

* Integrated ESD protection

* High flexi

BLS6G2731S-120 General Description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W.

BLS6G2731S-120 Datasheet (369.38 KB)

Preview of BLS6G2731S-120 PDF

Datasheet Details

Part number:

BLS6G2731S-120

Manufacturer:

Ampleon

File Size:

369.38 KB

Description:

Ldmos s-band radar power transistor.
BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 2 1 September 2015 Product data sheet 1. Product profile 1.1 Gener.

📁 Related Datasheet

BLS6G2731S-120 LDMOS S-band Radar Power Transistor (NXP)

BLS6G2731S-130 LDMOS S-band radar power transistor (NXP)

BLS6G2731-120 LDMOS S-band radar power transistor (Ampleon)

BLS6G2731-120 LDMOS S-band Radar Power Transistor (NXP)

BLS6G2731-6G LDMOS S-Band radar power transistor (Ampleon)

BLS6G2731-6G LDMOS S-Band radar power transistor (NXP Semiconductors)

BLS6G2735L-30 S-band LDMOS transistor (Ampleon)

BLS6G2735L-30 S-band LDMOS transistor (NXP)

BLS6G2735LS-30 S-band LDMOS transistor (Ampleon)

BLS6G2735LS-30 S-band LDMOS transistor (NXP)

TAGS

BLS6G2731S-120 LDMOS S-band radar power transistor Ampleon

Image Gallery

BLS6G2731S-120 Datasheet Preview Page 2 BLS6G2731S-120 Datasheet Preview Page 3

BLS6G2731S-120 Distributor