BLS6G2731S-120, BLS6G2731-120 Datasheet - Ampleon

BLS6G2731S-120 LDMOS S-band radar power transistor

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 100 s;  = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation f VDS PL Gp D tr tf (GHz) (V) (W.

BLS6G2731S-120 Features

* Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 s with  of 10 %:

* Output power = 120 W

* Power gain = 13.5 dB

* Efficiency = 48 %

* Easy power control

* Integrated ESD protection

* High flexi

BLS6G2731S-120, BLS6G2731-120 Datasheet

BLS6G2731S-120 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLS6G2731S-120, BLS6G2731-120. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

BLS6G2731S-120, BLS6G2731-120

Manufacturer:

Ampleon

File Size:

369.38 KB

Description:

Ldmos s-band radar power transistor.

This datasheet PDF includes multiple part numbers: BLS6G2731S-120, BLS6G2731-120.
Please refer to the document for exact specifications by model.

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BLS6G2731S-120 BLS6G2731-120 LDMOS S-band radar power transistor Ampleon

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